Technical Activities

[skip navigation] NIST Physics Laboratory home page Technical Activities go to NIST home page NIST Physics Laboratory home page Products and Services Physical Reference Data Research Areas / Divisions Contact us Search the Physics Laboratory webspace
"Technical Activities 2002" - Table of Contents Division home page
Electron and Optical Physics Division
The strategy for meeting this goal is to improve measurement science and to develop the measurements and standards needed by emerging science and technology-intensive industries.
GOAL: To support
emerging electronic,
optical, and nanoscale
technologies.
Strategic Focus Areas:
    First Nanoscale Electronics and Magnetics  -  to develop techniques for fabricating nanostructures and measuring their electronic and magnetic properties.
Second    Extreme Ultraviolet Radiation Metrology  -  the development of metrology for extreme-ultraviolet (EUV) optics, the maintenance of national primary standards for radiometry in the EUV and adjoining spectral regions, and the operation of national user facilities for EUV science and applications.
Third Coherent Matter-Wave and Quantum Information Processing Metrology
Nanoscale Electronics and Magnetics:
to develop techniques for fabricating nanostructures and measuring their electronic and magnetic properties.

INTENDED OUTCOME AND BACKGROUND

The intended outcome of this work is the continuous improvement of techniques for fabricating and characterizing nanometer-scale electronic and magnetic structures, as required to meet current and future needs of the semiconductor and data-storage industries. Our main tools for pursuing this program are scanning electron microscopy with polarization analysis (SEMPA) and scanning tunneling microscopy (STM). The Electron Physics Group in the Division has been a leading innovator in both of these techniques, which are outgrowths of work begun at NIST in the 1970s.

SEMPA enables us to use conventional scanning electron microscopy (SEM) to image nanometer-scale magnetic structure, through spin-polarization analysis of secondary electrons ejected from the sample. It has several unique capabilities that distinguish it from other magnetic imaging techniques: it is a surface-sensitive technique, and so is especially well suited for in situ studies of thin-film and surface magnetization; it provides a direct measurement of the magnetization of a material region, rather than of a magnetic field; it has the high spatial resolution (about 10 nm), long working distance, and large depth-of-field characteristic of SEM; and it facilitates simultaneous measurements of the magnetization and the topography. SEMPA studies have led to a number of breakthroughs in understanding the basic mechanisms of magnetism on the microscopic scale, and have also addressed near-term measurement issues faced by the magnetic data-storage industry.

Our STM program is focused on understanding the mechanisms of growth of nanostructures on surfaces and determining their electronic properties. In recent years the STM program has been particularly concerned with the magnetic multilayer materials that have been investigated by SEMPA. The complementarity of SEMPA and STM measurements has elucidated many connections between conditions of layer growth and magnetic-device performance.

The main current direction of the STM program is the course of research made possible by the recently-completed Nanoscale Physics Laboratory. The laboratory was designed with the goal of measuring quantum-electronic structures with atomic-scale imaging resolution and high electron-energy resolution. Samples can be grown in situ and probed with magnetic fields of up to 10 T at temperatures down to 2.5 K.

Accomplishments

  • Nanometer-Scale Measurements of the Vortex Lattice in a Type-II Superconductor

      Figure 1

    Figure 1. Vortex flux lattice in V3Si observed in STM Fermi-level conductance image at H = 3 T and T = 2.3 K. The peaks indicate the location of vortices with a single flux quantum of magnetic flux.

    We have made the first real-space measurements of the hexagonal-to-square symmetry transition in the vortex lattice of V3Si, a type-II superconductor. The mixed state in a type-II superconductor is characterized by the properties of the vortex or flux lattice that forms in the presence of an applied magnetic field. Vortices are formed at points where the magnetic field penetrates the superconductor in a flux tube through the sample. The flux penetrates the superconductor in quantized units of the flux quantum (Phi0 = h/2e), with the region near the core of the vortex acting as a normal metal. As the density of vortices in the material increases, a vortex lattice is formed by the interactions between the flux tubes or vortices.

    Many of the important applications of superconductors rely on the formation and stabilization of the vortex lattice at high values of applied field. For example, the optimization of vortex pinning in high-TC materials controls flux creep and is responsible for the high critical currents needed for the operation of superconducting magnets. Probing the underlying physics of the vortex lattice is not only of technological importance, it is also the key to understanding more complex interactions, such as the coexistence of superconductivity and magnetism.

    Real-space measurements of vortex lattices are difficult because the length scale of the vortex unit cell is in the nanometer range for field strengths on the order of 1 T. Such measurements are now possible using cryogenic scanning tunneling microscopy, which probes the electronic structure of the superconductor on the atomic scale.

    Measurements of the symmetry transition in V3Si were made by recording spatial maps of the local density of states (LDOS) of the superconductor as a function of magnetic field, using the low-temperature scanning tunneling microscope of the Nanoscale Physics Laboratory in the Electron Physics Group. At the location of the vortex, the superconductor is a normal metal and has a much higher density of states for energies inside the superconducting gap. Thus, spatial maps of the LDOS show a bright spot at the location of the vortex.

    Figure 2

    Figure 2. (a-d) STM Fermi-level conductance images of the vortex lattice of V3Si as a function of applied magnetic field at 2.3 K. (e-h) Corresponding auto-correlation images showing the unit cell of the vortex lattice undergoing the hexagonal-to-square symmetry transition.

    Measuring the vortex lattice as a function of magnetic field shows that vortex-vortex interactions are important in determining the symmetry of the vortex lattice. Moreover, the measurements reveal that symmetries in the electronic structure of the superconductor play an important role, as they directly link the symmetry of the vortex lattice to the underlying crystal structure.

    CONTACT: Dr. Joseph A. Stroscio
    (301) 975-3716
    joseph.stroscio@nist.gov


  • Magnetic Nanostructures in Patterned Ferromagnetic Rings

    Small, patterned, magnetic, thin-film structures are a critical part of emerging magneto-electronic technologies, which range from non-volatile magnetic random-access memories to magnetic biosensor arrays. To be useful in devices, the magnetic structure of these rings must assume only a few well-defined magnetic states, and the switching between states must be reproducible.

    Figure 3

    Figure 3. SEMPA image of a magnetic Co ring (center) along with a micromagnetic simulation (right).

    In collaboration with the Naval Research Lab and the University of Cambridge Thin-Film Magnetism Group, we have used the NIST Scanning Electron Microscopy with Polarization Analysis (SEMPA) facility to non-intrusively image the magnetic nanostructure of a promising subclass of these structures: microscopic magnetic rings. The SEMPA images provided a first direct look at these magnetic states.

    By comparing different sized thin-film elements grown under various conditions, the SEMPA images revealed that the interplay between shape and crystalline anisotropy can lead to unexpected magnetic configurations. In particular, undesirable magnetic vortices can be induced in thick-walled rings during switching. The SEMPA images were also used as a quantitative test of micromagnetic models that, in turn, can explore regions of the switching behavior not accessible to static SEMPA measurements.

    CONTACT: Dr. John Unguris
    (301) 975-3712
    john.unguris@nist.gov


  • Switching Nanomagnets

    A current passing through two ferromagnets separated by a non-magnetic spacer layer exerts a torque on each magnetization whenever the two magnetization directions are not parallel. In the appropriate configuration, a large enough current passing through such a multilayer can switch the relative alignment of the magnetizations of the layers between parallel and antiparallel. In other configurations, it appears that the magnetization of one layer rapidly precesses around that of the other layer.

      Figure 4

    Figure 4. Electron spin scattering from a ferromagnetic interface. The change in spin due to scattering rotates the magnetization.

    These effects, which were observed starting in 1999, are being studied for two device applications. If the size of the current necessary to reverse magnetic bits can be reduced sufficiently, spin-transfer torques could provide a way to switch bits in magnetic random-access memory (MRAM). Alternatively, if the interpretation of recent experiments as precession is correct, it should be possible to make controllable-frequency oscillators.

    We have developed quantitative models for spin-transfer torques to help enable the development of devices based on this effect. These models require three types of calculations. We have carried out quantum-mechanical calculations to determine the fate of an electron that scatters from an interface with a ferromagnet. These calculations show that the transverse component of the incident spin current is absorbed close to the interface.

    We use this result as a boundary condition in the second type of calculation, semiclassical transport. These calculations determine the polarization, both magnitude and direction, of the current throughout the structure. With the input from the first-principles calculations, our semiclassical calculations reproduce both the transport properties of the structures and the current-induced torques.

    Analyzing the calculations in detail highlights the important physical processes, which are difficult to access experimentally. The calculated torques can be used as input to the third type of calculation, classical simulations of the magnetization dynamics.

    CONTACT: Dr. Mark D. Stiles
    (301) 975-3745
    mark.stiles@nist.gov


  • Linking the Micro and Nano Worlds with Nanolines

      Figure 5

    Figure 5. Beating of nanolines: the superposition of two nanoscale patterns with slightly different periodicities results in an optically visible beating on the microscale.

    As technologies ranging from electronics and data storage to biotechnology become more and more miniaturized, there is an increasing need for ways to make measurements that bridge the domains of the micrometer and the nanometer.

    We have collaborated with scientists from the University of Nijmegen to make an artifact that facilitates this connection. It relies on a technology first demonstrated in the Electron Physics Group in 1993, called laser-focused atomic deposition. In its original form, an optical standing wave focused chromium atoms onto a surface, creating an array of lines with a highly precise spacing of 212.78 nm. In the new process, two arrays of lines with slightly different spacing are superimposed, creating a beating, or Moiré, pattern with periodicity of 44.46 µm. When viewed through crossed polarizers, this pattern is clearly visible with an optical microscope.

    The result of this process is that nanometer-scale and micrometer-scale patterns are created on a single substrate in coherent registration with each other. Ongoing investigations indicate that because of the resonant nature of the laser-focused atomic-deposition process, the dimensions of the patterns may be accurately traced to an atomic frequency, so that the patterns can be used as absolute length standards on the nano- and micro-scale.

    CONTACT: Dr. Jabez J. McClelland
    (301) 975-3721
    jabez.mcclelland@nist.gov


  • Electron Beam Induced Magnetic Switching

      Figure 6

    Figure 6. A series of SEMPA images from Fe/GaAs (110) showing the electron-beam-induced magnetization reorientation.

    Understanding and controlling the magnetic properties of ferromagnetic thin films grown on semiconductor substrates is a critical element in developing hybrid magnetic/semiconductor magnetoelectronic devices. We use the exquisite surface sensitivity provided by SEMPA to systematically explore the properties of various ferromagnet/semiconductor combinations. As part of this work, we discovered that electron beams can be used to induce changes in the magnetization direction in ferromagnetic thin films.

    When Fe films are grown epitaxially on the (110) crystal surface of GaAs, the magnetization can be trapped in a metastable state, oriented along the [-110] direction. Irradiating the sample with an electron beam causes the magnetization to locally rotate by 90° into the stable [100] direction.

    In addition to providing information regarding domain-wall dynamics in Fe/GaAs, this phenomenon may also provide a means of locally writing magnetic information or patterns in Fe films with electron-beam precision. Work is underway to understand the electron-beam/sample interaction that drives the reorientation, and to investigate its potential for electron-beam writing of magnetic information.

    CONTACT: Dr. John Unguris
    (301) 975-3712
    john.unguris@nist.gov


First strategic focus   |   Second strategic focus   |   Third strategic focus

"Technical Activities 2002" - Table of Contents