Technical Activities

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Electron and Optical Physics Division

Technical Highlights

  • Calibrations and Instrumentation Development at the NIST/ARPA National EUV Reflectometry Facility. The NIST/ARPA National EUV Reflectometry Facility at SURF II, the only such facility in the U.S. open to all members of the EUV community, entered its fifth year of operation. Over 170 calibrations were performed in 1994 on a variety of mirrors, gratings, photocathodes, and photographic emulsions for collaborators in industry, national laboratories, and universities. Fabrication of a new reflectometer is well underway and should be completed this summer. The new reflectometer will be able to accommodate optics up to 35 cm in diameter and 40 kg in mass. This capability, which will be unique, is necessary for the characterization of large optical components required for EUV projection systems. (T.B. Lucatorto, C.S. Tarrio, and R.N. Watts)

    Figure 1

    Figure 1. A 25 µ period copper TEM grid illuminated by 13 nm radiation and imaged using the nanodetector. The magnification is about 370X and the preliminary resolution is about 0.5 µ. The bright spot is a tear in the 20 nm thick carbon film coating the grid and the vertical lines are an artifact due to the CCD frame grabber used to capture the image.

  • First Images from the Nanodetector. The "nanodetector," a unique EUV/X-ray microscope for high resolution imaging, has produced its first images. It is a conversion microscope which converts an EUV or X-ray image into a photoelectron image which is then magnified by a low-energy electron microscope. We have designed this device for several possible uses. In EUV lithography it could be used to test and align the projector optics and for mask inspection. In x-ray (proximity) lithography it could be used for mask inspection. In a more conventional microscope configuration, it could be used to image biological structures, to provide elementally resolved images of microstructured composites, and to provide mapping of magnetic domains. (R.N. Watts, C.S. Tarrio, and T.B. Lucatorto)
  • Fabrication of Ultraprecise Reference Surfaces by Thin Film Deposition. The technology developed for the fabrication of EUV multilayer mirrors includes the capability of depositing multilayer stacks up to a micron thick without degrading the smoothness of the surface from that of the substrate. Present reference surfaces, which are fabricated by mechanical polishing, cannot be made reliably ultraprecise and ultrasmooth simultaneously. We plan to fabricate ultraprecise reference surfaces by first taking state-of-the-art smoothness surfaces and mapping their figure. The figure maps will then be used to create free standing 1-to-1 masks that correlate transmission through the mask with deviation of the surface from the geometric ideal. (High spots, less transmission and vice versa.) For this program we have established a cooperative research agreement with IBM and Eberhard Spiller, the father of EUV multilayer optics, in which Spiller's entire thin film deposition apparatus has been donated to NIST and Spiller will act as collaborator and consultant. The initial phase of the program will concentrate on empirically tailoring our multilayer deposition techniques to optimize their application to the fabrication of geometrically "perfect" surfaces. Subsequently, our goals will turn towards more fundamental studies of growth formation for amorphous and microcrystalline thin films. (C.S. Tarrio, R.N. Watts, and T.B. Lucatorto)
  • Electronic and Chemical Structure of Metal-Semiconductor Interfaces. In collaboration with a group at the Forschungszentrum Juelich (Germany), we have begun an application of ab initio quantum molecular dynamics to study the growth of boron films on silicon substrates, and vice versa, with particular attention to the dependence upon growth conditions of chemical bonding at the interface, interface sharpness, and interlayer stress. These are critical factors in the ultimate performance of B/Si multilayer optics now being developed for extreme ultraviolet imaging.

    At present we are concerned specifically with the interaction of B clusters with the surface of amorphous Si. The electrons are treated within the framework of density-functional theory, with a pseudopotential approximation for the valence-core interaction and a plane-wave orbital basis. A bulk amorphous Si sample has been prepared by heating and annealing a 64-atom system with periodic boundary conditions; an amorphous Si surface is then made by doubling the size of the supercell in one direction, and annealing. A study of the "reconstruction" of this surface is in progress.

    The structure of B clusters has been investigated by the same approach, and comparison made with all-electron calculations and mass-spectrometric measurements. In agreement with recent Japanese work we find that the B12 icosahedral structure is metastable; in addition we find that it can withstand heating up to temperatures of about 8,000 K. (C.W. Clark)
  • Calibration Services and Device Development for Far-Ultraviolet Radiometry. Absolute calibrations of NIST working standards for the far UV were carried out using the new dual-grating monochromator system on the SURF II instrument calibration beamline. These calibrations utilize the calculable flux from the SURF II electron storage ring as the absolute standard, and form the basis for NIST detector radiometry in the 116 nm to 254 nm spectral region. In addition to lending further confidence to the NIST far UV detector calibration base, a problem was identified and corrected concerning the filter material originally procured for use in this system. Several NIST standards were calibrated during these sessions.

    A collaborative effort with industry, described in Appendix F, has led to major advances in far UV silicon photodiode technology.

    Thirty-one calibrations of transfer standard detectors were performed in FY94, for applications in aeronomy, plasma diagnostics, solar physics, and astronomy. In addition to these calibrations, a number of special-purpose detectors and filters were characterized as research collaborations. An extreme ultraviolet solar monitor planned for a 1995 launch aboard the SOHO international satellite was characterized at the SURF II detector calibration facility, both on the instrument calibration beamline, and on the detector calibration beamline (L.R. Canfield and R.E. Vest).
  • The Spectrometer Calibration Facility at SURF II. During 1994 there were 16 instruments calibrated by 9 user groups at the Spectrometer Calibration Facility at SURF II. Users of the facility included Naval Research Laboratory, National Institute of Standards and Technology, University of Southern California Space Sciences Center, NASA Goddard Space Flight Center, and the National Center for Atmospheric Research High Altitude Observatory. The University of Southern California used three different SURF II facilities to calibrate a unique instrument for the upcoming Solar Heliospheric Observatory (SOHO) mission. The Solar EUV Monitor consists of a high density (500 lines/nm) gold transmission grating and three XUV photodiodes. The instrument will provide on-board cross calibration for other spectrometers aboard the spacecraft by providing spectral measurements of the singly-charged helium ion transition at 30.4 nm with an 8 nm bandpass. Characterization of the transmission grating was performed on the Soft X-Ray Reflectometry Beamline, the relative spectral response of the entire instrument was measured on the XUV Diode Calibration Beamline and the absolute wideband spectral response of the entire instrument was measured on the Spectrometer Calibration Beamline. (M. Furst, R. Graves, and R.P. Madden)
  • The NIST Parallel Applications Development Environment. Efforts on developing scalable algorithms for electronic structure problems began in 1994 with support from the NIST High Performance Computing and Communications initiative. This work takes place largely in an environment of networked workstations of different types, which are joined together to form a parallel "virtual machine." Interest in this sort of computational parallelism is growing rapidly due to the development of "message-passing library" software, such as the PVM program produced at the Oak Ridge National Laboratory, which enables independent Unix workstations to act as a virtual machine, communicating with each other using standard network protocols. However, developing robust code for such a virtual machine is still somewhat of a pioneering exercise. In a typical application, one must maintain independent sets of files on each machine; perform separate procedures for compilation, execution and debugging; and manage input and output streams and communications between processors. In collaboration with staff of the Computing and Applied Mathematics Laboratory, we have developed a program, the Parallel Applications Development Environment (PADE) (Figure 2, is now obsolete) which provides a graphical console for the parallel virtual machine. PADE centralizes the management of files and allows all actions required of remote processors to be handled by simple console commands. A "tree view" representation of the virtual machine, which exhibits the processors and their file systems in a two-dimensional map, enables files to be duplicated or moved between processors by familiar "click and drag" actions. (M. Edwards, J. Turner, and C.W. Clark).
  • Laser-focused Deposition of Chromium Nanostructures. In an ongoing effort to explore the application of atom optics to nanotechnology, we have been examining a process which uses an optical standing wave generated with a laser to focus chromium atoms as they deposit onto a surface. Each node of the standing wave acts as a lens for the atoms, focusing them into lines or dots with nanometer-scale dimensions spaced by half the optical wavelength, or 213 nm.

    Having achieved the first demonstration of the growth of Cr nanostructures last year, we have been concentrating recently on improving our understanding of the atom-optical properties of the standing wave laser field and increasing the resolution of the process. A major step forward in our understanding of the process has arisen out of our recent analysis of the focusing in terms of a particle-optics analogue. We have arrived at a paraxial solution to the equation of motion of the atoms in the standing-wave node, which has allowed us to view the focusing process in a completely optical sense, with well-defined focal lengths, principal planes and aberrations. The result is an ability to quickly make predictions on the best way to improve the focusing process.

    To test our new understanding in the laboratory, we have carried out some depositions with a more tightly-focused laser beam. The paraxial theory predicts that this is the simplest way to improve the resolution of the focusing process. Figure 3 shows the results of this experiment. We see that the linewidth of the deposited chromium lines is now 46 nm, a significant reduction from its earlier value of 65 nm. In addition, the region between the lines is significantly flatter than it was in previous depositions.

    Figure 3

    Figure 3. Atomic force microscope image of narrow chromium lines deposited by laser-focused atomic deposition.
    Work on the focused deposition of chromium continues in the new fiscal year, with anticipated progress in depositing even narrower lines, forming two-dimensional structures, and exploring other expansions of the technique. (R. Gupta, Z. Jabbour, J. McClelland, and R. Celotta)
  • SEMPA Measurements of Magnetic Exchange Coupling Through V, Al, and Cu Thin Films. The magnetic exchange coupling between ferromagnetic films separated by nonmagnetic spacer layers is of intense technological interest, because of the potential use of exchange coupled multilayers for magnetic recording heads and as magnetic field sensors. Researchers in the Electron Physics Group have studied the exchange coupling by using SEMPA to image the multilayer magnetization. The SEMPA measurements were combined with in situ scanning electron microscope and reflection high-energy electron diffraction measurements in order to correlate the magnetic exchange coupling properties with the film's structural properties.

    In the current work, the exchange coupling between Fe layers separated by V, Al, and Cu spacer films has been investigated. These films differ markedly from the previously studied Ag, Au, and Cr interlayer films which grew epitaxially, one monolayer at a time, on the Fe(100) substrate. In general, the growth of V, Al or Cu begins in a layer-by-layer fashion, but after a few layers the film growth becomes rough and three dimensional. In the smooth films the exchange coupling oscillates between ferromagnetic and antiferromagnetic as the spacer thickness varies, but the roughening dramatically changes the nature of the oscillatory coupling. For example, in the case of Al, the coupling through the rough film does not oscillate and is orthogonal to the ferromagnetic/antiferromagnetic direction. SEMPA was also used to investigate the influence of roughness induced pin-hole defects on the exchange coupling. This work should be useful in understanding the exchange coupling in the rougher multilayers more commonly used for practical devices. (J. Unguris, D.T. Pierce, and R.J. Celotta)
  • Statistical Properties of Islands during Thin Film Growth. Ultra-thin metal films have become increasingly important in today's smaller devices. To improve performance of thin films, scientists in the Electron Physics Group studied the process of film growth from the earliest stages, when single atoms come together to form islands to the later stages of thin film formation. In the growth process, atoms that land on the substrate undergo a two-dimensional random walk. Pairs of migrating atoms collide randomly over the surface and may bind to form dimers. The dimers may or may not dissociate thermally before other atoms diffuse to join them. The size at which the island forms a stable base for growth is called the critical size. Since the diffusion of the deposited atoms depends on temperature, the critical size will vary with temperature. The diffusion rate can vary orders of magnitude with a change in temperature of only 100 °C. The number and size of the islands that form during growth therefore also depend strongly on growth temperature. We discovered that an analysis of the size distributions of the growing islands show self-similar properties in that different size distributions can be rescaled to fall on a single universal curve, which is independent of all material properties, except for the critical island size. The island size distributions show self-similar properties as the atom diffusion rate is increased over four orders of magnitude by changing the growth temperature by 250 °C. This property is similar to the scaling of coastlines and other fractal objects which show similar shapes and outlines independent of the magnification (see Figure 4). The critical nucleus size of the islands at a given growth temperature can be extracted from a comparison of the measured universal scaling curve with theoretical models. These measurements are the first to confirm theoretical predictions of scaling in this growth regime. This work allows a test of the statistical growth theories which promise a more general and powerful description of thin film fabrication. (J.A. Stroscio and D.T. Pierce)
  • Figure 4

    Figure 4. STM images, 100 × 100 nm, of single layer Fe islands (white) on the Fe(001) surface (black). Sample temperatures during growth are (a) 20 °C, (b) 108 °C, (c) 163 °C, (d) 256 °C, (e) 301 °C, and (f) 356 °C.
  • Roughness and Pattern Formation in Thin Film Growth. Controlling roughness in thin film growth is a major technological challenge as present and future technological specifications call for films with thickness fluctuations as small as a single atomic layer. Understanding the origin of roughness in film growth has been a stimulating theoretical challenge as well. Two schools of thought have developed to explain the origin of roughness in film growth. One theory describes roughness as originating from the random fluctuations in the impinging flux leading to self-affine surfaces that exhibit dynamic scaling. The second theoretical effort has focused on the importance of microscopic processes leading to roughness, such as energy barriers to the diffusing atoms in going down step edges. Scientists in the Electron Physics Group have recently shown experimentally and theoretically that roughness in the growth of Fe films on Fe(001) whiskers is controlled by the second mechanism, i.e., step edge barriers for atom diffusion, which leads to pattern formation in the thin film (Figure 5(a)). The pattern spacing is initially set by the initial nucleation of islands (see above). Subsequent atoms that land on the islands recoil from the energy barriers at the step edge leading to a greater probability of nucleation of new daughter islands on the incomplete parent islands. Repeated application of this scenario leads to a wedding-cake or mound structure in the film as shown by the experimental measurements (Figure 5(a)). To gain a full theoretical understanding of the growth process, we simulated the film growth with a continuum approach. The simulations produced excellent agreement with the properties of the measured films (Figure 5(b-c)) shedding light on important processes in ultra-thin film growth. (J.A. Stroscio, D.T. Pierce, and M.D. Stiles)
  • Giant Magnetoresistance. Giant magnetoresistance in multilayers has been the subject of intense theoretical study, but significant questions still remain. The role of spin dependent scattering at interfaces has been a particular problem. Utilizing a semiclassical Boltzman approach previously introduced and improved by various workers, we have added surface roughness in a more realistic manner than has been done previously. We included varying interfacial geometric roughness with no lateral coherence, correlated quasiperiodic roughness, and varying chemical composition of the surface. The interplay between these three aspects of the interfaces was found to enhance or suppress the magnetoresistance depending on whether it decreased the asymmetry in the spin-dependent scattering of the conduction electrons. Numerical calculations were carried out for Fe/Cr and Fe/Cu multilayers. (D.R. Penn)
  • Superconductivity. We have attempted to get a better understanding of the role of complex electronic structure in superconductivity by using the dielectric function. The dielectric function is of fundamental importance in understanding many properties of solids: the response to an external field, the elementary excitations of the solid, and screening in the solid. The total dielectric function includes not only screening by the electrons but also the polarizability of the lattice. Over-screening by the lattice results in an attractive total pairing interaction that may lead to superconductivity. We studied the total dielectric function, which we derived in previous work, and focused on the total interaction between two electrons. The formalism includes lattice effects and thus includes the coupling between transverse phonon modes and electrons. In simpler treatments, only coupling to longitudinal modes is taken into account. The additional electron-phonon coupling is important for superconductivity.

    Figure 5

    Figure 5. (a) STM image of 10 monolayers of Fe grown on an Fe whisker at 20 C. The image is 100  × 100 nm. Note the pattern formation of mounds. (b) Contour map of a smaller 20 × 20 nm region from the left bottom corner in (a). Solid lines denote equi-height contours with the heavy line at the mean height. (c) Contour plots of the calculated surface height during growth using a continuum growth equation model.
    A necessary condition for an attractive interaction between electrons is that the total dielectric function have at least one negative eigenvalue. We showed that there is always one negative eigenvalue for each dimension of the system. In addition it is required that a solid be stable. The condition for this is that eigenvalues of the total dielectric be negative or greater than one. This leads to the condition that the solid will be stable if the electronic and lattice portions are individually stable. It is also possible to have a stable system if the electronic portion is unstable but the lattice is stable. If the lattice is unstable it is not possible to have a stable solid. Because small negative eigenvalues and hence superconductivity occur in solids that are near to being unstable, stability conditions are important. We also derived a new sum rule for the dielectric functions that augments the well known acoustic sum rule. Unlike the acoustic sum rule, the new sum rule is important for the case of a metal as well as for an insulator and places restrictions on the electronic portion of the dielectric function. We carried out numerical calculations for a one dimensional model dielectric function in order to make the formalism more concrete and to demonstrate the importance of the sum rules. (D.R. Penn)
  • Imaging of Magnetic Domains and Domain Wall Dynamics in AlliedSignal METGLAS Ribbons. Researchers from the Electron Physics Group used the SEMPA facility to image the magnetic domain structure of METGLASTM ribbons. These are amorphous ferromagnetic ribbons produced by AlliedSignal Inc. for use as a magnetic core material in power distribution transformers. The domain structure is of great importance in determining the efficiency of these transformers. Ribbons were observed in both the as-cast state and after annealing in a longitudinal magnetic field, allowing the effects of the annealing process to be evaluated.

    We are particularly interested in the interactions between the domain walls and surface defects; SEMPA is well suited to this task because the magnetic structure and the surface topography are imaged simultaneously. Electron Physics Group researchers developed a SEMPA sample holder capable of clamping a short length of METGLASTM ribbon into a loop and applying a magnetic induction around the loop. This system can image the domain walls while an ac or dc induction is applied, and without distortion of the SEMPA image, which is sensitive to stray magnetic fields. This capability has provided the first SEMPA images of METGLASTM domain walls in motion and under static magnetic inductions.

    Figure 6

    Figure 6. SEMPA measurements of the magnetic domains under four static magnetic inductions. The central hysteresis loop, which was recorded under ac excitation illustrates the magnetic state corresponding to each image. The small, relatively immobile domains at the upper right of the images are pinned by a surface defect.
    Figure 6 shows the magnetic state near a surface defect observed under four static magnetic inductions. The hysteresis loop, which was recorded at power line frequency, illustrates the magnetic state corresponding to each of the images. Of particular note are the small, irregularly shaped domains at the upper right in these images. These domains change far less than the large domain in the central region, due to the presence of a surface defect which pins the domain walls in its vicinity. (A. Gavrin, J. Unguris, D. Pierce, and R. Celotta)
  • SEMPA Observation of Extended Magnetic Domains in Magnetoresistive Granular Metals. Using the new high resolution SEMPA facility, Electron Physics Group researchers demonstrated the existence of large (100 nm) magnetic domains in several cobalt-silver granular metals; these domains persist over a wide range of compositions and processing conditions. Researchers at several institutions (IBM, UC San Diego, Johns Hopkins University) have shown that granular ferromagnets such as Co-Ag exhibit the giant magnetoresistance effect. Such materials have a broad range of potential applications in the magnetic recording industry and in products which rely on the sensing of magnetic fields, e.g., antilock brakes. However, the basis for this phenomenon is not fully understood. Few researchers anticipated large magnetic domains in granular Co-Ag alloys: the microstructure of these alloys was thought to limit the magnetic domains to sizes comparable with the particle size (less than 10 nm). The presence of large domains suggests that a significant fraction of the cobalt in these materials does not contribute to the giant magnetoresistance. In collaboration with researchers at The Johns Hopkins University, members of the Electron Physics Group have investigated the material composition and fabrication parameters which lead to the presence of large domains, and have suggested two alternate models for their origin. The domains may represent correlations among large numbers of isolated cobalt particles, or they may be due to residual cobalt in the silver matrix. This work is being continued in an effort to ascertain the origin of the domains.

    Figure 7

    Figure 7. Vector map of the magnetization at the surface of a granular Co0.35Ag0.65 film, as recorded by SEMPA. The heavy arrows indicate a magnetic "source" and "drain."
    Figure 7 shows a vector map representation of several domains at the surface of a thick Co-Ag film. It is apparent in this figure that there are several "sources" and "drains" of magnetic flux; the heavy arrows point to one of each. It is possible that this pattern represents the closure domains capping an underlying domain structure which is perpendicular or canted to the film plane. (A. Gavrin and M.H. Kelley)
  • Exposure of Resists with Metastable Atoms for Nanolithography. In a recent patent application, members of the Electron Physics Group proposed a lithographic process in which a resist is exposed by metastable rare-gas atoms. The advantage of this exposure mechanism is that all the newly developing tools of atom optics, with their inherent high resolution and potential for massive parallelism, can be applied to the lithographic fabrication on nanostructures.

    In a collaboration involving the Electron and Optical Physics Division, the Atomic Physics Division, and groups from the Harvard University Physics and Chemistry departments, the first stage of this process has recently been demonstrated using self-assembled monolayers as a resist on gold. A series of exposures have been carried out, using both helium and argon metastable atoms, and a dose-response curve has been measured. In the near future, this work will be extended, utilizing atom optical techniques to realize the potential for nanometer-scale resolution and massive parallelism. (J. McClelland)
  • Anomalously Cold Temperatures in a Laser-Cooled Chromium Beam. In our efforts to understand the mechanisms involved in producing a highly collimated atomic beam, we have made a systematic study of polarization gradient cooling of chromium atoms. In recent years, the use of optical forces, to damp the atomic motion and hence collimate atomic beams, has been actively studied by various groups with a wide variety of atomic species. However, this has led to some surprising results in the first study made with chromium atoms.

    Current laser-cooling models predict that at low intensities and/or large detunings (when the excited state fraction is small), the temperature depends only on the light shift (AC stark shift) which is proportional to the light intensity and inversely proportional to the laser detuning from the atomic resonance. In our transverse cooling experiments, we have found two interesting regimes. At low light shifts, a minimum temperature corresponding to a few times the recoil energy can be obtained for a small fraction of the atomic beam. At high light shifts, in a region that has been largely unexplored, the temperature unexpectedly remains essentially constant with the light shift and up to 85 % of the atoms are cooled.

    While it has been suspected that conventional models might not be applicable to situations with high light shifts and an appreciable excited state fraction, there have been no prior definitive tests. The unexpectedly low temperatures we have obtained in this regime should provide incentive for detailed calculations, for example taking account of the excited state population in this regime. (R. Gupta, J. McClelland, and R.J. Celotta)

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